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MMFT5P03HD
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0)
(Notes 2 & 4)
V (BR)DSS
30
?
?
28
?
?
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
(V DS = 24 Vdc, V GS = 0 Vdc)
(V DS = 24 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
I DSS
I GSS
?
?
?
?
?
?
1.0
25
100
μ Adc
nAdc
ON
CHARACTERISTICS (1)
Gate Threshold Voltage (Cpk ≥ 2.0)
(V DS = V GS , I D = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Notes 2 & 4)
V GS(th)
1.0
?
1.75
3.5
3.0
?
Vdc
mV/ ° C
Static Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 5.2 Adc)
(V GS = 4.5 Vdc, I D = 2.6 Adc)
(Cpk ≥ 2.0)
(Notes 2 & 4)
R DS(on)
?
?
79
119
100
150
m Ω
Forward Transconductance (V DS = 15 Vdc, I D = 2.0 Adc)
(Note 2)
g FS
2.0
4.0
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
475
220
70
950
440
140
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
?
12
24
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 15 Vdc, I D = 4.0 Adc,
V GS = 10 Vdc,
R G = 6.0 Ω ) (Note 2)
(V DD = 15 Vdc, I D = 2.0 Adc,
V GS = 4.5 Vdc,
R G = 6.0 Ω ) (Note 2)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
24
47
46
19
55
30
40
48
94
92
38
110
60
80
Gate Charge
(V DS = 24 Vdc, I D = 4.0 Adc,
V GS = 10 Vdc) (Note 2)
Q T
Q 1
Q 2
Q 3
?
?
?
?
17
1.7
6.3
4.6
24
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 4.0 Adc, V GS = 0 Vdc) (Note 2)
(I S = 4.0 Adc, V GS = 0 Vdc,
T J = 125 ° C)
(I S = 4.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ μ s) (Note 2)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1.1
0.89
39
20
19
0.042
1.5
?
?
?
?
?
Vdc
ns
μ C
C pk =
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values. Max limit ? Typ
3 x SIGMA
http://onsemi.com
3
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